Semiconductor device and method of manufacturing the same

ABSTRACT

A gate trench  13  is formed in a semiconductor substrate  10 . The gate trench  13  is provided with a gate electrode  16  formed over a gate insulating film  14 . A portion of the gate electrode  16  protrudes from the semiconductor substrate  10 , and a sidewall  24  is formed over a side wall portion of the protruding portion. A body trench  25  is formed in alignment with an adjacent gate electrode  16 . A cobalt silicide film  28  is formed over a surface of the gate electrode  16  and over a surface of the body trench  25 . A plug  34  is formed using an SAC technique.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2006-216659 filed onAug. 9, 2006, including the specification, drawings, and abstract isincorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor devices and manufacturingtechnologies, and more particularly to techniques effective for a powerMISFET (Metal Insulator Semiconductor Field Effect Transistor) having atrench gate structure and manufacturing the same.

2. Description of Related Art

Japanese Patent Laid-open Nos. 2000-196075 and 2000-277531 disclosetechniques for preventing a source offset by protruding a trench gateelectrode from the surface of a semiconductor substrate.

Japanese Patent Laid-open No. 2002-246596 discloses a manufacturingmethod of a power MISFET in which the cell pitch is reduced by aself-aligned structure. Specifically, it discloses a technique forforming a source region and a body contact region utilizing a sidewallformed on a sidewall portion of a trench gate electrode protruding froma semiconductor substrate.

Japanese Patent Laid-open No. 2005-5438 discloses a technique forturning a gate electrode surface, a source region, and a body contactregion into silicide in a self-aligned manner by utilizing a sidewallformed on a side wall portion of a trench gate electrode protruding froma semiconductor substrate.

Japanese Patent No. 2647884 discloses a technique for forming an oxidefilm formed on the bottom portion of a trench to be thicker than theinner wall of the trench.

As an effective means of obtaining high performance in power MISFETs,shrinkage of the device structure has been advanced. However, theadvancement in shrinkage of the device structure is regulated byphotolithography technologies in many ways, and currently, it isdifficult to achieve miniaturization of the device structure whilepreventing side effects.

For example, the techniques disclosed in Japanese Patent laid-open Nos.2000-196075 and Japanese Patent Laid-open No. 2000-277531 requirealignment tolerance between the gate electrode and the contact hole forconnecting with the source region, and therefore, with these techniques,it is difficult to improve the cell density. The technique disclosed inJapanese Patent Laid-open No. 2002-246596 requires that the insulatingfilm should be processed so as to be left over the gate electrode inorder to insulate the gate electrode, which protrudes from thesemiconductor substrate, from the source wire coupled to the sourceregion. However, with the structure described in Japanese PatentLaid-open No. 2002-246596, there is a problem that it is impossible toform an insulating film with a stable film thickness over the gateelectrode and gate withstand voltage defects become apparent. Thetechnique described in Japanese Patent Laid-open No. 2005-5438 makesheavy use of the technique of forming patterns by a photolithographytechnology as the manufacturing technology. For example, the formationof the protruding portion of the gate electrode, the formation of thesource region and the body contact region, and the formation of thecontact hole are implemented by photolithography technology. In thiscase, there are a range of constraints on miniaturization of the devicestructure because of problems associated with alignment accuracy in thephotolithography technique, so it is considered that there is a limit onminiaturization of the device structure. For this reason, a silicideprocess is conducted in the technique described in Japanese PatentLaid-open No. 2005-5438. However, it is difficult to advanceminiaturization of the device structure to such an extent that thesilicide process becomes effective. Thus, it is understood that theconventional techniques have problems in miniaturization of the devicestructure.

Even if it were possible to achieve the miniaturization of the devicestructure along the planar direction (horizontal direction) of thesemiconductor substrate, there would exist side effects associated withan increase in the gate resistance because of the resulting decrease inthe cross-sectional area of the trench gate electrode and withrealization of shrinkage along the thickness direction (verticaldirection) of the semiconductor substrate.

SUMMARY OF THE INVENTION

It is an object of the invention to provide a power MISFET and amanufacturing method that make it possible to achieve miniaturization ofthe device structure without being affected by the constraints from thephotolithography technology and that can suppress the side effectsoriginating from miniaturization.

In the invention disclosed in the present application, the outline of arepresentative example is as follows.

A method of manufacturing a semiconductor device according to theinvention includes the steps of: (a) forming a first insulating filmover a main surface of a semiconductor substrate of a first conductivitytype; (b) patterning the first insulating film to form an opening; and(c) forming a gate trench in the semiconductor substrate using as a maskthe first insulating film in which the opening has been formed. Themethod also includes the steps of: (d) forming a gate insulating filmover the gate trench; (e) forming a polysilicon film over the firstinsulating film including within the gate trench; and (f) removing thepolysilicon film formed over the first insulating film and allowing thepolysilicon film to remain in the opening of the first insulating filmand in the gate trench, to form a gate electrode. The method alsoincludes the steps of: (g) removing a portion of the first insulatingfilm to allow a portion of the gate electrode to protrude from thesemiconductor substrate; (h) implanting an impurity into thesemiconductor substrate to form a source region of the firstconductivity type in an adjacent region to the gate electrode; and (i)forming a second insulating film over the semiconductor substrate. Themethod also includes the steps of: (j) anisotropically etching thesecond insulating film to form a sidewall over a side wall portion ofthe gate electrode that protrudes from the semiconductor substrate; and(k) removing a portion of the semiconductor substrate that is betweenthe sidewalls formed on adjacent gate electrodes, to form a body trenchdeeper than the depth of the source region. The method also includes thesteps of: (l) implanting an impurity into the semiconductor substrate toform a first semiconductor region that serves as a body contact regionof a second conductivity type at a bottom portion of the body trench;and (m) forming a first metal silicide film in the gate electrode, thesource region, and the first semiconductor region. In the step (k) ofthe method, the body trench is self-aligned with the gate electrode.

In another aspect, a method of manufacturing semiconductor deviceaccording to the invention includes the steps of: (a) forming a firstinsulating film over a main surface of a semiconductor substrate of afirst conductivity type; (b) patterning the first insulating film toform an opening; and (c) forming a gate trench in the semiconductorsubstrate using as a mask the first insulating film in which the openinghas been formed. The method also includes the steps of: (d) forming agate insulating film over the gate trench; (e) forming a polysiliconfilm over the first insulating film including within the gate trench;and (f) removing the polysilicon film formed over the first insulatingfilm and allowing the polysilicon film to remain in the opening of thefirst insulating film and in the gate trench, to form a gate electrode.The method also includes the steps of: (g) removing a portion of thefirst insulating film to allow a portion of the gate electrode toprotrude from the semiconductor substrate; (h) implanting an impurityinto the semiconductor substrate to form a first source region of thefirst conductivity type in an adjacent region to the gate electrode; and(i) forming a second insulating film over the semiconductor substrate.The method also includes the steps of: (j) anisotropically etching thesecond insulating film to form a sidewall over a side wall portion ofthe gate electrode that protrudes from the semiconductor substrate; and(k) implanting an impurity into the semiconductor substrate to form asecond source region of the first conductivity type in an adjacentregion to the first source region. The method also includes the stepsof: (l) removing a portion of the semiconductor substrate that isbetween the sidewalls formed on adjacent gate electrodes, to therebyform a body trench that is deeper than the depth of the second sourceregion; and (m) implanting an impurity into the semiconductor substrateto form a first semiconductor region that serves as a body contactregion of a second conductivity type at a bottom portion of the bodytrench. In this method, the first source region is formed in a regionshallower than the second source region, and in the step (l), the bodytrench is aligned with the gate electrode.

In another aspect, a semiconductor device according to the inventionincludes: (a) a semiconductor substrate of a first conductivity type;(b) a gate trench formed in a main surface of the semiconductorsubstrate; and (c) a gate insulating film formed over an inner wall anda bottom portion of the gate trench. The semiconductor device alsoincludes: (d) a gate electrode formed so as to fill the gate trench anda portion of which protrudes from the semiconductor substrate; (e) asidewall formed on a side wall portion of the gate electrode protrudingfrom the semiconductor substrate; and (f) a source region of the firstconductivity type, formed so as to be adjacent to the gate electrode.The semiconductor device also includes: (g) a body trench formed betweenthe sidewalls formed on adjacent gate electrodes by self-alignment withthe gate electrodes, so as to be deeper than a depth of the sourceregion; and (h) a first semiconductor region formed at a bottom portionof the body trench and having a second conductivity type that isdifferent from the first conductivity type. The semiconductor devicealso includes: (i) a drain region of the first conductivity type, formedin an opposite surface to the main surface of the semiconductorsubstrate; and (j) a first metal silicide film formed in the gateelectrode, the source region, and the first semiconductor region,wherein the source region and the first semiconductor region areelectrically coupled to each other by the first metal silicide film.

In another aspect, a semiconductor device according to the inventionincludes: (a) a semiconductor substrate of a first conductivity type;(b) a gate trench formed in a main surface of the semiconductorsubstrate; (c) a gate insulating film formed over an inner wall and abottom portion of the gate trench; and (d) a gate electrode formed so asto fill the gate trench and a portion of which protrudes from thesemiconductor substrate. The semiconductor device also includes: (e) afirst source region of the first conductivity type, formed so as to beadjacent to the gate electrode; (f) a sidewall formed over a side wallportion of the gate electrode protruding from the semiconductorsubstrate; and (g) a second source region of the first conductivitytype, formed so as to be adjacent to the first source region; Thesemiconductor device also includes: (h) a body trench formed between thesidewalls formed on adjacent gate electrodes by self-alignment with thegate electrodes, so as to be deeper than a depth of the second sourceregion; and (i) a first semiconductor region formed at a bottom portionof the body trench and having a second conductivity type that isdifferent from the first conductivity type. The semiconductor devicealso includes: (j) a drain region of the first conductivity type, formedin an opposite surface to the main surface of the semiconductorsubstrate, wherein the first source region is formed in a regionshallower than the second source region.

An advantage obtained by representative embodiments of the inventiondisclosed in the present application is described briefly in thefollowing.

By introducing a manufacturing process by self-alignment, it becomespossible to achieve miniaturization of the device structure withoutbeing affected by the constraints arising from the photolithographytechnology and to suppress the side effects originating from theminiaturization.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a semiconductor device according to afirst preferred embodiment of the invention;

FIG. 2 is a plan view showing a portion of the planar structure of thesemiconductor device according to the first preferred embodiment;

FIG. 3 is a cross-sectional view taken along the line A-A in FIG. 1;

FIG. 4 is a schematic view illustrating an n-channel power MISFET havinga gate trench structure;

FIG. 5 is a cross-sectional view illustrating a manufacturing process ofthe semiconductor device according to the first preferred embodiment;

FIG. 6 is a cross-sectional view illustrating a manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 5;

FIG. 7 is a cross-sectional view illustrating a manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 6;

FIG. 8 is a cross-sectional view illustrating a manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 7;

FIG. 9 is a cross-sectional view illustrating manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 8;

FIG. 10 is a cross-sectional view illustrating manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 9;

FIG. 11 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 10;

FIG. 12 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 11;

FIG. 13 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 12;

FIG. 14 is a cross-sectional view illustrating manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 13;

FIG. 15 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 14;

FIG. 16 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 15;

FIG. 17 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 16;

FIG. 18 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 17;

FIG. 19 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 18;

FIG. 20 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 19;

FIG. 21 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 20;

FIG. 22 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 21;

FIG. 23 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 22;

FIG. 24 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 23;

FIG. 25 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 24;

FIG. 26 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 25;

FIG. 27 is an enlarged view illustrating how a plug and thesemiconductor substrate are in contact with each other in a powerMISFET;

FIG. 28 is a view illustrating an example in which the plugs are formedby an SAC technique but the body contact region is formed by aphotolithography technology;

FIG. 29 is a view illustrating a case in which the width of a plug isnarrower than the width of the gap between its adjacent sidewalls.

FIG. 30 is a cross-sectional view illustrating a manufacturing processof the semiconductor device according to a second preferred embodiment;

FIG. 31 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 30; and

FIG. 32 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 31; and

FIG. 33 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 32; and

FIG. 34 is a cross-sectional view illustrating a semiconductor deviceaccording to the first preferred embodiment;

FIG. 35 is a cross-sectional view illustrating a semiconductor deviceaccording to the second preferred embodiment;

FIG. 36 is a view illustrating a case in which ions are implanted into asource extension region in a vertical direction;

FIG. 37 is a view illustrating a case in which ions are implanted intothe source extension region in a diagonal direction;

FIG. 38 is a view illustrating a case in which ions are implanted into asource diffusion region in a vertical direction;

FIG. 39 is a view illustrating a case in which ions are implanted intothe source diffusion region in a diagonal direction;

FIG. 40 is a circuit diagram of a synchronous rectifier-type DC/DCconverter;

FIG. 41 is a timing chart of a main-switch power MISFET and asynchronous rectifying power MISFET;

FIG. 42 is a cross-sectional view illustrating a semiconductor deviceaccording to a third preferred embodiment;

FIG. 43 is a plan view showing a portion of the planar structure of thesemiconductor device according to the third preferred embodiment;

FIG. 44 is a cross-sectional view taken along the line B-B in FIG. 42;

FIG. 45 is a cross-sectional view illustrating a manufacturing processof the semiconductor device according to the third preferred embodiment;

FIG. 46 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 45;

FIG. 47 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 46;

FIG. 48 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 47;

FIG. 49 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 48;

FIG. 50 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 49;

FIG. 51 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 50;

FIG. 52 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 51;

FIG. 53 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 52;

FIG. 54 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 53;

FIG. 55 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 54;

FIG. 56 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 55;

FIG. 57 is a cross-sectional view illustrating manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 56;

FIG. 58 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 57;

FIG. 59 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 58;

FIG. 60 is a cross-sectional view illustrating a semiconductor deviceaccording to a fourth preferred embodiment;

FIG. 61 is a cross-sectional view illustrating a manufacturing processof the semiconductor device according to the fourth preferredembodiment;

FIG. 62 is a cross-sectional view illustrating a manufacturing processof the semiconductor device subsequent to the manufacturing processshown in FIG. 61; and

FIG. 63 is a cross-sectional view illustrating manufacturing process ofthe semiconductor device subsequent to the manufacturing process shownin FIG. 62.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following description of the preferred embodiments, a pluralityof sections or embodiments are separately described, but they are notirrelevant to one another except when clearly stated and each one may bea modification of, a detailed description of, or a complementarydescription of part or all of another.

Further, the number of an element and the like (including numbers ofitems, numerical values, quantities, and ranges) mentioned in thefollowing description of the preferred embodiments are not limited to aparticular number mentioned except when clearly stated and when clearlylimited to particular numbers, and the number of that element may beeither greater than the particular number or less than the particularnumber.

Moreover, needless to say, in the following description of the preferredembodiments, the elements (including the constituting process steps) arenot necessarily indispensable unless clearly shown and unless clearlyconsidered theoretically indispensable.

Likewise, the shapes, positional relationships, and the like of theconstituting elements mentioned in the following description of thepreferred embodiments are intended to include those substantiallysimilar or analogous to the shapes and the like mentioned, except whenclearly stated or when clearly considered theoretically that it is notthe case. This also applies to the above-mentioned numerical values andranges.

Furthermore, the same or like parts are designated by the same referencecharacters throughout the drawings for illustrating the preferredembodiments, and repetitive descriptions thereof are omitted. It shouldbe noted that hatching may be used even in plan views for facility ofcomprehending the drawings.

First Preferred Embodiment

A semiconductor device according to a first preferred embodiment isdescribed with reference to the drawings. FIG. 1 is a plan viewillustrating an upper surface of the semiconductor chip over which asemiconductor device according to the first preferred embodiment isformed. As shown in FIG. 1, a source pad 1 made of, for example, analuminum wire is formed in a central portion of the semiconductor chip.A gate wire 2 is formed so as to surround the source pad 1, and the gatewire 2 is coupled to a gate pad 3. A guard ring 4 is formed outward ofthe gate pad 3 and the gate wire 2 so as to surround the circumferenceof the semiconductor chip. The gate wire 2, the gate pad 3, and theguard ring 4 are also formed of, for example, aluminum wire. The guardring 4 is a ring-shaped structure provided around the element formationregion for the purpose of surface protection.

FIG. 2 is a schematic enlarged cross-sectional view taken along the lineA-A in FIG. 1. FIG. 2 illustrates the structure formed in a layer thatis below the surface layer shown in FIG. 1, in which the source pad 1,the gate wire 2, the gate pad 3, and the guard ring 4 are formed. Inother words, it shows, in a plan view, the structure formed in a layerbelow the surface layer, with an interlayer dielectric film interposedtherebetween. As shown in FIG. 2, a chip outermost region, a gate wireextension region, a cell region (inactive cell), and a cell region(active cell) are formed from the outer edge of the semiconductor chipalong the line A-A in FIG. 1.

Referring to FIG. 2, a semiconductor region is formed in the chipoutermost region, and plugs 34 are formed over the semiconductor region.These plugs 34 are coupled to the guard ring 4, shown in FIG. 1. Next,an insulating film 21 is formed in the gate wire extension region, and agate extension electrode 20 is formed over this insulating film 21. Thegate extension electrode 20 is coupled to the gate wire 2, shown in FIG.1, via plugs 34. A portion of the gate extension electrode 20 is formedso as to pierce through the insulating film 21 and fill up the gatetrenches that reach the semiconductor substrate, and the gate trenchesextend to the cell regions. In the cell regions, the gate trenches areformed in a lattice-like pattern, and the gate trenches are filled witha polysilicon film, forming gate electrodes 16. In the cell region(inactive cell), no source region 23 is formed between the gateelectrodes 16 formed in a lattice-like pattern. In the cell region(active cell), source regions 23, which are n-type semiconductorregions, are formed between the gate electrodes 16 formed in alattice-like pattern. A plug 34 is formed over each source region 23formed in the cell region (active cell), and the plug 34 is coupled tothe source pad 1, shown in FIG. 1.

FIG. 3 is a cross-sectional view taken along the line A-A in FIG. 1. Inthe chip outermost region shown in FIG. 3, an n-type semiconductorregion 23 a is formed over a surface of the n-type semiconductorsubstrate 10 (including an n-type epitaxial layer), and a trench 25 a isformed adjacent to the n-type semiconductor region 23 a. A p-typesemiconductor region 26 a is formed at a bottom portion of the trench 25a, and a cobalt silicide film 28 is formed in a surface of thesemiconductor substrate 10 including a side surface of and a bottomportion of the trench 25 a. Further, a silicon nitride film 29 is formedover the semiconductor substrate 10 in which the trench 25 a is formed,and a silicon oxide film 30 is formed over the silicon nitride film 29.Plugs 34, which pierce through the silicon nitride film 29 and thesilicon oxide film 30 and reach the p-type semiconductor region 26 aformed at the bottom portion of the trench 25 a, are formed in thesilicon nitride film 29 and the silicon oxide film 30. The guard ring 4is formed over these plugs 34.

Next, the configuration of the gate wire extension region is described.The insulating film 21 made of, for example, a silicon oxide film isformed in the gate wire extension region over the semiconductorsubstrate 10. On the other hand, a p-type well 18 made of a p-typesemiconductor region is formed in the semiconductor substrate 10 from aportion of the gate wire extension region to the cell region (inactivecell). A gate trench 13 that pierces through the insulating film 21 andreaches the p-type well 18 is formed in the gate wire extension region,and a gate insulating film 14 made of, for example, a silicon oxide filmis formed over the inner wall of the gate trench 13. In addition, thegate extension electrode 20 is formed so as to fill up the gate trench13 and extend over the insulating film 21. This gate extension electrode20 includes the cobalt silicide film 28. The silicon nitride film 29 isformed over the gate extension electrode 20, and the silicon oxide film30 is formed over the silicon nitride film 29. Plugs 34 that piercethrough the silicon nitride film 29 and the silicon oxide film 30 andreach the gate extension electrode 20 are formed in the silicon nitridefilm 29 and the silicon oxide film 30. The gate wire 2 is formed overthese plugs 34.

Subsequently, the configuration of the cell region (inactive cell) isdescribed. The p-type well 18 is formed in the semiconductor substrate10 of the cell region (inactive cell), and a channel forming region 22,which becomes a body region, is formed in this p-type well 18. Thechannel forming region 22 comprises a p-type semiconductor region. Agate trench 13 is formed so as to pierce through the channel formingregion 22, and a gate insulating film 14 made of, for example, a siliconoxide film is formed over the inner wall of the gate trench 13. Apolysilicon film, for example, is filled over the gate insulating film14 within the gate trench 13, forming a gate electrode 16. Most part ofthis gate electrode 16 is buried in the gate trench 13, but a portionthereof protrudes from a top portion of the gate trench 13. In otherwords, the gate electrode 16 has a portion within the gate trench 13 anda portion protruding from the interior of the gate trench 13 over a topportion of the semiconductor substrate 10. The gate electrode 16 isformed of a polysilicon film, and the cobalt silicide film 28 is formedover the top of the gate electrode 16. A sidewall 24 made of, forexample, a silicon oxide film is formed in a side wall portion of thisgate electrode 16 that protrudes from the semiconductor substrate 10. Abody trench 25 is formed in the semiconductor substrate 10 adjacent tothe sidewall 24. A body contact region comprising a p-type semiconductorregion is formed at a bottom portion of the body trench 25. A cobaltsilicide film 28 is formed over the surface of the body trench 25. Thesilicon nitride film 29 is formed over the semiconductor substrate 10where the gate electrode 16 and the body trench 25 are formed in thisway, and the silicon oxide film 30 is formed over the silicon nitridefilm 29. Plugs 34, which pierce through the silicon nitride film 29 andthe silicon oxide film 30 and reach the body contact region formed atthe bottom portion of the body trench 25, are formed in the siliconnitride film 29 and the silicon oxide film 30. These plugs 34 areelectrically coupled to the source pad 1.

Next, the configuration of the cell region (active cell) is described. Achannel forming region 22, which becomes a body region, is formed in thesemiconductor substrate 10 within the cell region (active cell). Thechannel forming region 22 comprises a p-type semiconductor region. Agate trench 13 is formed so as to pierce through the channel formingregion 22, and a gate insulating film made of, for example, a siliconoxide film is formed over the inner wall of the gate trench 13. Apolysilicon film, for example, is filled over the gate insulating film14 within the gate trench 13, forming a gate electrode 16. Most part ofthis gate electrode 16 is buried in the gate trench 13, but a portionthereof protrudes from a top portion of the gate trench 13. The gateelectrode 16 is formed of a polysilicon film, and the cobalt silicidefilm is formed over the top of the gate electrode 16. A sidewall 24 madeof, for example, a silicon oxide film is formed in a side wall portionof this gate electrode 16 that protrudes from the semiconductorsubstrate 10. A source region 23 comprising an n-type semiconductorregion is formed in the semiconductor substrate 10 under the sidewall24.

Herein, in order to achieve miniaturization of the device structure andimprove the performance, it is necessary that the source region shouldbe as shallow a junction as possible. However, with what is called arecess structure, in which the gate electrode can be formed only in theregion below the semiconductor substrate surface, it is difficult todispose the gate electrode stably relative to the source region becauseof variations in etch amount. If the device results in a source offsetstructure, in which the gate electrode is positioned below the sourceregion, the device may no longer function as a FET. Essentially, asource region and a drain region are electrically coupled to each otherwith a channel formed by applying a positive voltage to a gateelectrode. However, when the device results in a source offsetstructure, the source region and the drain region do not electricallycouple with each other easily, resulting in a considerable increase inthe on-state resistance of the power MISFET. In contrast, the powerMISFET according to the first preferred embodiment makes it possible todispose the gate electrode 16 stably with respect to the source region23 by allowing a portion of the gate electrode 16 to protrude from thesemiconductor substrate 10, thereby reliably preventing a source offsetstructure.

A body trench 25 is formed in the semiconductor substrate 10 adjacent tothe sidewall 24. A body contact region that comprises a p-typesemiconductor region is formed at a bottom portion of the body trench25. A cobalt silicide film 28 is formed over the surface of the bodytrench 25. In other words, the cobalt silicide film 28 is formed overthe source region 23 that is exposed from a side surface of the bodytrench 25, and over a body contact region 26 formed at a bottom portionof the body trench 25. In other words, the source region 23 and the bodycontact region 26 are electrically coupled to each other by the cobaltsilicide film 28. The silicon nitride film 29 is formed over thesemiconductor substrate 10 where the gate electrode 16 and the bodytrench 25 are formed in this way, and the silicon oxide film 30 isformed over the silicon nitride film 29. Plugs 34, which pierce throughthe silicon nitride film 29 and the silicon oxide film 30 and reach thebody contact region formed at the bottom portion of the body trench 25,are formed in the silicon nitride film 29 and the silicon oxide film 30.These plugs 34 are electrically coupled to the source pad 1.

The power MISFET according to the first preferred embodiment isconfigured as described above. What actually operates as a power MISFETis the power MISFET formed in the cell region (active cell). Theoperation of this power MISFET will be discussed. In this power MISFET,a positive voltage is applied to the drain region formed in the n-typesemiconductor substrate 10 to ground the source region 23. Then, apositive voltage is applied to the gate electrode 16, from the state inwhich the gate electrode 16 is grounded and is not working. When apositive voltage is applied to the gate electrode 16, the electronspresent in the channel forming region 22 gather toward the side surfaceof the gate trench 13, which forms the gate electrode 16, and thechannel forming region 22 that is adjacent to the side surface of thegate trench 13 turns to an n-type semiconductor region. This invertedn-type semiconductor region becomes a channel, which is a path forelectrons. The source region and the semiconductor substrate 10 (drainregion) are coupled to each other by this channel, causing the electronsto flow from the source region via the channel to the drain region. Inother words, since electric current flows in the opposite direction tothe electron flow, the current flows from the drain region via thechannel to the source region. In this way, current flows along thethickness of the semiconductor substrate 10 (in the vertical direction),turning on the power MISFET. Subsequently, when the gate electrode 16 isturned from a state in which a positive voltage is applied into agrounded state or a state to which a negative voltage is applied, thechannel near the side surface of the gate trench 13 disappears.Therefore, the source region and the drain region are electricallydisconnected, and the power MISFET is turned off. Repeating this seriesof operations allows the power MISFET to be turned on/off. Thus, bycontrolling a voltage applied to the gate electrode 16, the power MISFETcan be used as a switch.

Here, a difference in the configuration of the power MISFET from anormal MISFET is that, in the power MISFET, an n-type semiconductorregion, which becomes a source region, and a p-type semiconductorregion, which becomes a body contact region, are disposed adjacent toeach other, and are electrically coupled to each other by the samecontact (plug). This is for keeping the source region and the bodycontact region to be at the same potential, which is a common structurefor the power MISFET. The reason why a body contact region is formed inthe power MISFET will be discussed with reference to the drawings.

FIG. 4 is a schematic view illustrating an n-channel power MISFET havinga gate trench structure. Referring to FIG. 4, an n-type semiconductorsubstrate 10 (including an n-type epitaxial layer) is formed as a drainregion. A channel forming region 22 (p-type semiconductor region), whichbecomes a body region, is formed over the semiconductor substrate 10. Asource region 23 (n-type semiconductor region) is formed above thechannel forming region 22 (over the surface). A gate electrode 16 of thegate trench structure and a body contact region 26 (p-type semiconductorregion) are formed adjacent to the source region 23. In the power MISFETthus formed, when the power MISFET is turned off, the gate voltageapplied to the gate electrode 16 becomes equal to or lower than thethreshold voltage. Then, the channel formed near the side surface of thegate electrode 16 disappears, cutting off the current path, so the draincurrent does not flow. At this time, a counterelectromotive force isgenerated in the load with inductance (L), and the generatedcounterelectromotive force is applied to the drain region of the powerMISFET.

Therefore, a reversed bias voltage is applied to the pn junction formedat the boundary between the n-type the semiconductor substrate 10 andthe channel forming region 22 (p-type semiconductor region). When thisreversed bias voltage exceeds the junction withstand voltage of the pnjunction, avalanche breakdown occurs, and a large amount ofelectron-hole pairs are generated.

In a power MISFET, a parasitic npn bipolar transistor is formed by thesource region 23 (n-type semiconductor region), the channel formingregion 22 (p-type semiconductor region), and the semiconductor substrate10 (n-type semiconductor region). Electrons produced when avalanchebreakdown occurs flow into the drain region, and holes travel throughthe channel forming region 22 and directly below the source region 23,and flow into the body contact region 26. Here, the channel formingregion 22 corresponds to the base region of the parasitic npn bipolartransistor, and when the base resistance is large, the parasitic bipolartransistor is turned on. In such a cell in which a parasitic npn bipolartransistor is turned on, an uncontrollable large current flows throughthe gate electrode 16 of the power MISFET, generating heat. At thistime, because of the temperature rise due to the heat generation, theelectrical resistance of the semiconductor region reduces, allowing afurther large current to flow therethrough, so positive feedback occurs.As a result, a large current flows through locally, causing the powerMISFET to break. This phenomenon is called avalanche breakdown.

In order for such avalanche breakdown not to occur, it is necessary tolower the base resistance so that the parasitic npn bipolar transistoris not turned on. For this reason, the channel forming region 22, whichbecomes the base region, is provided with the body contact region 26. Inthis body contact region 26, a p-type impurity is implanted at a higherconcentration than in the channel forming region 22, to reduce the baseresistance. Moreover, the body contact region 26 is disposed adjacent tothe source region 23, to reduce the base resistance. Furthermore, byelectrically coupling the body contact region 26 to the source region23, the potential difference between the base region (the body contactregion 26) and the emitter region (the source region 23) is made assmall as possible so that the parasitic npn bipolar transistor cannot beturned on. In other words, the power MISFET is provided with such aconfiguration in which the body trench is formed, the body contactregion 26 is formed at a bottom portion of the body trench, and the bodycontact region 26 and the source region 23 are coupled to each other, inorder to avoid the turning on of the parasitic npn bipolar transistor asmuch as possible and prevent the avalanche breakdown of the powerMISFET.

In order to advance miniaturization in the power MISFET configured inthis way, it is necessary to shrink the constituting components thatform the power MISFET. For example, the body trench is generally formedusing a photolithography technique and an etching technique. In thiscase, it is impossible to avoid the problem of misalignment associatedwith the photolithography technique, and it is necessary to provide acertain alignment tolerance between the gate electrode 16 and the bodytrench. This is a serious limitation for the advancement inminiaturization.

Here, one feature in the first preferred embodiment is that the bodytrench is formed using a self-alignment technique, not using thephotolithography technique. This technique achieves miniaturization ofthe body trench without being regulated by the photolithographytechnique. Specifically, the body trench is formed by self-alignment inthe following manner. As illustrated in FIG. 3, a sidewall 24 is formedin a side wall portion of a gate electrode 16, which protrudes from thesurface of the semiconductor substrate 10; this sidewall 24 is utilized.Specifically, by etching the semiconductor substrate 10 using thesidewalls 24 formed on the side wall portions of adjacent gateelectrodes 16 as a mask, a body trench 25 can be formed in an adjacentregion to the gate electrodes 16. This method enables the body trench 25to be formed by self-alignment with the gate electrodes 16, so theproblem of misalignment does not arise, unlike the case of thephotolithography technique. Therefore, it becomes possible to narrow thespace between the gate electrode 16 and the body trench 25, and toadvance miniaturization beyond the limit of the photolithographytechnique.

In the power MISFET according to the first preferred embodiment, thereexists evidence showing that the body trench 25 has been formed by beingaligned with gate electrodes 16, not by a photolithography technique.This evidence becomes obvious as the structure in which the height ofthe uppermost portion of the sidewall 24 is higher than the height ofthe uppermost portion of the gate electrode 16, as seem from FIG. 3.That is, the body trench 25 is formed by etching the silicon that formsthe semiconductor substrate 10. When forming the body trench 25 byetching, the etching is conducted, under the condition in which the gateelectrodes 16 formed of the polysilicon film are exposed. Therefore, aportion of each of the gate electrodes 16 is also etched. On the otherhand, the sidewall 24 is formed of a silicon oxide film and therefore itis not etched when etching silicon. Thus, the structure in which theheight of the uppermost portion of the sidewall 24 is higher than theheight of the uppermost portion of the gate electrode 16 is formed.Therefore, it follows that the structure in which the height of theuppermost portion of the sidewall 24 is higher than the height of theuppermost portion of the gate electrode 16 indicates that the bodytrench 25 has been formed by self-alignment with the gate electrodes 16.

In order to achieve miniaturization of the power MISFET in a horizontaldirection, it is necessary to achieve miniaturization of the gateelectrode 16 as well as the miniaturization of the body trench 25.However, when attempting miniaturization of the gate electrode 16, theproblem of gate resistance increase in the gate electrode 16 arisesbecause the width of the gate electrode 16 becomes smaller. In otherwords, when attempting miniaturization of the power MISFET in ahorizontal direction, another side effect arises.

In the first preferred embodiment, however, the gate electrode 16 isformed from the polysilicon film and the cobalt silicide film 28 formedover the polysilicon film. Since the cobalt silicide film 28 has a lowresistance, it is possible to suppress an increase in the gateresistance due to the attempt of miniaturization of the gate electrode16. Thus, the first preferred embodiment makes it possible to suppressthe side effect associated with the miniaturization of the power MISFETin a horizontal direction. In other words, the first preferredembodiment achieves miniaturization of the power MISFET whilesuppressing the side effect of gate resistance increase.

Moreover, the cobalt silicide film 28 is also formed over the surface ofthe body trench 25. This makes it possible to electrically couple thebody contact region 26 formed at a bottom portion of the body trench 25and the source region 23 exposed from the side surface of the bodytrench 25 with the cobalt silicide film 28. This point is also onefeature of the invention. The body contact region 26 is a p-typesemiconductor region while the source region 23 is a n-typesemiconductor region. Accordingly, to electrically couple the bodycontact region 26 and the source region 23 with each other, it isnecessary to bring the body contact region 26 and the source region 23into contact with the plug 34. This means that the width of the plug 34needs to be wide, increasing the risk of bringing the plug 34 intocontact with the gate electrode 16. Nevertheless, in the first preferredembodiment, the body contact region 26 and the source region 23 areelectrically coupled with each other by the cobalt silicide film 28, andtherefore, the plug 34 need not be in contact with both the body contactregion 26 and the source region 23. Therefore, no problem arises even ifminiaturization of the plug 34 is attempted and the width is narrowed.Specifically, even if the plug 34 is structured so as to be coupled onlyto the body contact region 26, for example, no problem arises since thesource region 23 can be electrically coupled to the body contact region26 and the plug 34 via the cobalt silicide film 28. For this reason, theplug 34 can be miniaturized and the contact margin of the plug 34 andthe gate electrode 16 can be made large. As a result, reliability of thepower MISFET can be improved. Furthermore, even if the plug 34 is notcoupled to both the body contact region 26 and the source region 23because of misalignment of the plug 34, the body contact region 26 andthe source region 23 can be electrically coupled to each other by thecobalt silicide film 28. Therefore, a large tolerance margin for themisalignment of the plug 34 can be ensured. In addition, since thecobalt silicide film 28 is formed so as to be in contact with the sourceregion 23 and the body contact region 26, there is an advantage ofsuppressing electrical resistance even when the source region 23 and thebody contact region 26 are miniaturized.

Also, another feature of the first preferred embodiment is that thecontact margin of the plug 34 and the gate electrode can be made largeby forming the plug 34 by SAC (self-alignment contact). These featuresbecome apparent in the manufacturing processes. Therefore, the featureswill be discussed in detail when describing the manufacturing method ofthe power MISFET.

Next, a manufacturing method of a power MISFET according to the firstpreferred embodiment is described with reference to the drawings.

As shown in FIG. 5, using an epitaxial growth technique, an n-typeepitaxial layer is formed over the semiconductor substrate 10 doped withan n-type impurity. In the first preferred embodiment, the semiconductorsubstrate 10 doped with an n-type impurity and the n-type epitaxiallayer are collectively referred to as a semiconductor substrate 10. Theinsulating film 11 (the first insulating film) is formed over thesemiconductor substrate 10 using, for example, a thermal oxidationtechnique. This insulating film 11 is formed of, for example, a siliconoxide film.

Subsequently, as shown in FIG. 6, the insulating film 11 is patterned toform openings 12, using a photolithography technique and an etchingtechnique. Then, as shown in FIG. 7, the gate trenches 13 are formed inthe semiconductor substrate 10, using as a mask the insulating film 11in which the openings 12 have been formed. The gate trenches 13 areformed by, for example, dry etching.

Next, as shown in FIG. 8, the gate insulating film 14 is formed over theinner wall of each of the gate trenches 13. This gate insulating film 14is formed of, for example, silicon oxide film, and can be formed by, forexample, a thermal oxidation technique. It should be noted, however,that the gate insulating film 14 is not restricted to the silicon oxidefilm but may be formed of various other materials. For example, the gateinsulating film 14 may be a silicon oxynitride (SiON) film. In otherwords, it is possible to adopt a structure in which nitrogen issegregated at the interface between the gate insulating film 14 and thesemiconductor substrate 10. The silicon oxynitride film is moreeffective than the silicon oxide film to suppress the interface state inthe film and to reduce electron trapping. Therefore, the use of thesilicon oxynitride film can improve the hot carrier resistance of thegate insulating film 14, improving the dielectric strength. Moreover,impurities are less likely to pierce through the silicon oxynitride filmthan the silicon oxide film. For this reason, the use of the siliconoxynitride film as the gate insulating film 14 can suppress variationsin threshold voltage because of the diffusion of the impurity in thegate electrode to the semiconductor substrate 10 side. To form thesilicon oxynitride film, it is recommended to anneal the semiconductorsubstrate 10 in an atmosphere containing nitrogen, such as NO, NO₂, orNH₃. Alternatively, the same effect can be obtained by forming the gateinsulating film 14 formed of a silicon oxide film over the surface ofthe semiconductor substrate 10, and thereafter annealing thesemiconductor substrate 10 in an atmosphere containing nitrogen tosegregate nitrogen at the interface between the gate insulating film 14and the semiconductor substrate 10.

The gate insulating film 14 may be formed of, for example, a highdielectric constant film that has a higher dielectric constant than thesilicon oxide film. Conventionally, the silicon oxide film has been usedas the gate insulating film 14 from the viewpoints of high dielectricstrength and good electrical and physical stability in thesilicon-silicon oxide interface. Nevertheless, as device miniaturizationadvances, the gate insulating film 14 has been increasingly required tohave an extremely small film thickness. The use of such a thin siliconoxide film as the gate insulating film 14 causes what is called a tunnelcurrent, the phenomenon in which the electrons passing through thechannel of the MISFET tunnels through the barrier formed by the siliconoxide film and flows into the gate electrode.

In view of this, the use of a high dielectric film has become popular;the high dielectric film can increase the physical thickness with thesame capacity by using a material with a higher dielectric constant thanthat of the silicon oxide film. Since the high dielectric film canincrease the physical film thickness with the same capacity, so itbecomes possible to reduce leakage current.

For example, a hafnium dioxide film (HfO₂ film), one of hafnium oxides,is used as the high dielectric film. In place of the hafnium dioxidefilm, it is also possible to use other hafnium-based insulating films,such as a hafnium aluminate film, a HfON film (hafnium oxynitride film),a HfSiO film (hafnium silicate film), a HfSiON film (hafnium siliconoxynitride film), and a HfAlO film. Further, it is also possible to usehafnium-based insulating films in which an oxide such as tantalum oxide,niobium oxide, titanium oxide, zirconium oxide, lanthanum oxide, oryttrium oxide is implanted into one of these hafnium-based insulatingfilms. Since the hafnium-based insulating films have a higher dielectricconstant than the silicon oxide film and the silicon oxynitride film aswith the hafnium dioxide film, the use of the hafnium-based insulatingfilms can obtain the same effect as in the case of using the hafniumdioxide film.

Next, as shown in FIG. 9, the polysilicon film 15 is formed over theinsulating film 11. At this time, the polysilicon film 15 is formed soas to fill the interior of the gate trenches 13. An n-type impurity suchas phosphorus (P) or arsenic (As) is added to the polysilicon film 15,and the polysilicon film 15 may be formed using, for example, a CVD(Chemical Vapor Deposition) technique. Subsequently, as shown in FIG.10, the polysilicon film 15 formed over the insulating film 11 isremoved by an entire surface etchback using dry etching or by polishingusing a chemical mechanical polishing (CMP) technique. Thereby, thepolysilicon film 15 remains only in the interior of the openings 12 andthe gate trenches 13 provided in the insulating film 11. Thus, the gateelectrodes 16 are formed.

Thereafter, as shown in FIG. 11, a resist film 17 is applied, and then,exposure and development processes are performed to pattern the resistfilm 17. The patterning is conducted so as to form an opening in theregion where the p-type well 18 is to be formed. Specifically, theresist film is patterned so as to open a portion of the gate wireextension region and the cell region (inactive cell). Then, a p-typeimpurity such as boron (B) is ion-implanted using the patterned resistfilm 17 as a mask, whereby the p-type well 18 is formed.

Next, as shown in FIG. 12, the polysilicon film 19 is formed over theinsulating film 11 including the gate electrodes 16. An n-type impuritysuch as phosphorus or arsenic is added to the polysilicon film 19, andthe polysilicon film 19 may be formed using, for example, a CVDtechnique. Then, as shown in FIG. 13, the polysilicon film 19 ispatterned using a photolithography technique and an etching technique.Thereby, the gate extension electrode 20 can be formed in the gate wireextension region. Further, as shown in FIG. 14, the insulating film 11is patterned using a photolithography technique and an etchingtechnique. The insulating film 11 that is formed in the cell region(inactive cell) and in the cell region (active cell) is removed throughthis patterning. As a result, each of the gate electrodes 16 takes sucha shape that a portion thereof protrudes from the semiconductorsubstrate 10. In other words, a gate electrode 16 a portion of whichprotrudes from the semiconductor substrate 10 can be formed through thestep of removing the insulating film 11. On the other hand, theinsulating film 11 is patterned to remain in the gate wire extensionregion, and as a result, the insulating film 21 remains below the gateextension electrode 20.

Subsequently, as shown in FIG. 15, the channel forming region 22, whichbecomes the body region, is formed in the semiconductor substrate 10within the cell region (inactive cell) and the cell region (active cell)using a photolithography technique and an etching technique. Thischannel forming region 22 is a p-type semiconductor region doped with ap-type impurity such as boron. Next, as shown in FIG. 16, the sourceregion 23 is formed in the cell region (active cell) using aphotolithography technique and an ion implantation technique. The sourceregion 23 is formed in a region adjacent to the gate electrode 16. Thesource region 23 is an n-type semiconductor region doped with an n-typeimpurity such as arsenic. It should be noted that, in the step offorming the source region 23, an n-type semiconductor region 23 a isalso formed in the chip outermost region.

Then, as shown in FIG. 17, a silicon oxide film (second insulating film)is formed over the semiconductor substrate 10 using, for example, a CVDtechnique and thereafter, by subjecting the formed silicon oxide film toanisotropic dry etching, sidewalls 24 are formed on side wall portionsof the gate electrodes 16. Since portions of the gate electrodes 16protrude from the semiconductor substrate 10, the sidewalls 24 areformed on the side wall portions of the protruding portions.

Next, as shown in FIG. 18, using the sidewalls 24 as a mask, a bodytrench 25 that is deeper than the depth of the adjacent source region 23is formed. Specifically, the body trench 25 self-aligned with theadjacent gate electrodes 16 is formed between the sidewalls 24 formedover the side wall portions of the adjacent gate electrodes 16. Thispoint is one of the features of the invention. By forming the bodytrench 25 self-aligned with the gate electrodes 16, the body trench 25can be formed without using a photolithography technique.Conventionally, the body trench 25 has been formed by a photolithographytechnique using a resist film as a mask. In this case, it has beendifficult to achieve miniaturization because of the problem of alignmentaccuracy originating from the photolithography technique. In view ofthis, in the first preferred embodiment, the body trench 25 is formedusing the sidewalls 24 as a mask, without using the photolithographytechnique. It should be noted that the body trench 25 is formed byetching the semiconductor substrate 10 formed of silicon. The sidewalls24 can be utilized as a mask in etching silicon because the sidewalls 24are formed of a silicon oxide film. In this way, according to the firstpreferred embodiment, it becomes possible to eliminate the limitationarising from the problem of alignment accuracy and reduce the occupiedarea by a unit cell, because the body trench 25 is formed without usinga photolithography technique.

In the power MISFET according to the first preferred embodiment, thereexists evidence showing that the body trench 25 has been formed by beingaligned with gate electrodes 16, not by a photolithography technique.This evidence becomes obvious as the structure in which the height ofthe uppermost portion of the sidewall 24 is higher than the height ofthe uppermost portion of the gate electrode 16, as seem from FIG. 18.That is, the body trench 25 is formed by etching the silicon that formsthe semiconductor substrate 10. When forming the body trench 25 byetching, the etching is conducted under the condition in which the gateelectrodes 16 formed of the polysilicon film are also exposed.Therefore, a portion of each of the gate electrodes 16 is also etched.On the other hand, the sidewall 24 is formed of a silicon oxide film andtherefore it is not etched when etching silicon. Thus, the structure inwhich the height of the uppermost portion of the sidewall 24 is higherthan the height of the uppermost portion of the gate electrode 16 isformed. Therefore, it follows that the structure in which the height ofthe uppermost portion of the sidewall 24 is higher than the height ofthe uppermost portion of the gate electrode 16 indicates that the bodytrench 25 has been formed by self-alignment with the gate electrodes 16.

It should be noted that, in the step of forming the body trench 25 ineach of the cell region (inactive cell) and the cell region (activecell), a trench 25 a is also formed in the chip outermost region.

Subsequently, as shown in FIG. 19, the body contact region (the firstsemiconductor region) 26 is formed at the bottom portion of the bodytrench 25 by implanting a p-type impurity such as boron fluoride overthe entire surface of the main surface (element forming surface) of thesemiconductor substrate 10. It should be noted that a p-typesemiconductor region 26 a is also formed in the chip outermost region.The body contact region 26 is a p-type semiconductor region doped withthe p-type impurity at a higher concentration than in the channelforming region 22. This body contact region 26 is formed by implantingthe p-type impurity over the entire surface of the semiconductorsubstrate 10 without using a photolithography technique. At this time,since the sidewalls 24 present on the side wall portion of each gateelectrode 16 serves as a mask for ion implantation, it is possible toform the body contact region 26 to be self-aligned with the gateelectrode 16. Here, when the body contact region 26 is formed by aphotolithography technique without forming the body trench, thefollowing circumstance occurs due to misalignment; for example, the bodycontact region 26 becomes too close to, or too far from, the gateelectrode 16. When this is the case, the power MISFET may not be able toperform uniform device operations.

With the method in which the p-type impurity is implanted over theentire surface of the semiconductor substrate 10 as in the firstpreferred embodiment, however, misalignment does not occur, and it ispossible to form the body contact region 26 to be aligned with the gateelectrodes 16. In particular, when used for a product that requires highavalanche resistance, a p-type impurity, which has the same conductivitytype as that of the channel forming region 22, may be additionallyion-implanted to obtain an optimum concentration for desired devicecharacteristics.

Here, since the p-type impurity is ion-implanted over the entire surfaceof the semiconductor substrate 10, the p-type impurity is also implantedinto a top portion of each gate electrode 16 and the gate extensionelectrode 20. Each gate electrode 16 and the gate extension electrode 20are formed of a polysilicon film in which the n-type impurity is addedat a high concentration; therefore, if a p-type impurity, which has theopposite conductivity type, is implanted at a high concentration here,it is possible that the gate resistance may increase. In the case wherethis risk reaches to the level which may cause problems in terms of thedevice characteristics, a resist film 27 may be formed over the gateelectrode 16 and the gate extension electrode 20, as shown in FIG. 20,and the ion implantation may be carried out in that state.

Next, a cobalt film is formed over the entire surface of the mainsurface of the semiconductor substrate 10 using, for example, asputtering technique. Thereafter, as shown in FIG. 21, a cobalt silicidefilm 28 (first metal silicide film) is formed over the surfaces of thegate electrode 16, the gate extension electrode 20, and the body trench25 by annealing the semiconductor substrate 10. Specifically, siliconand a cobalt films are directly in contact with each other at thesurfaces of the gate electrode 16, the gate extension electrode 20, andthe body trench 25, and therefore, the silicon and the cobalt filmsreact with each other by the annealing, forming the cobalt silicide film28. In this way, the cobalt silicide film 28 can be formed over the gateelectrode 16. Therefore, it is possible to suppress the increase in thegate resistance of the gate electrode 16 because of the shrinkage of thegate trench 13, which is associated with miniaturization. That is, dueto miniaturization, the width of the gate trench 13, in which the gateelectrode 16 is formed, correspondingly becomes narrower. This may leadto an increase in the gate resistance of the gate electrode 16, which isformed of a polysilicon film. According to the first preferredembodiment, however, the cobalt silicide film 28 with a low resistanceis formed over the surface of the gate electrode 16, so even when thewidth of the gate trench 13 becomes narrower because of miniaturization,it is possible to suppress an increase in the gate resistance. In otherwords, the side effect of the gate electrode increase arising fromminiaturization can be eliminated.

In the first preferred embodiment, the body trench 25 is formed byself-alignment with the gate electrode 16. The source region 23 isexposed in the side surface of the body trench 25, and the body contactregion 26 is formed at a bottom portion of the body trench 25.Consequently, the source region 23 and the body contact region 26 areexposed in the surface of the body trench 25, so both regions can bereliably coupled to each other by the cobalt silicide film 28 formedover the surface of the body trench 25. It should be noted that althoughthe first preferred embodiment has described an example in which thecobalt silicide film 28 is formed, it is also possible to form atitanium silicide film or a nickel silicide film in place of the cobaltsilicide film 28.

Next, as shown in FIG. 22, a silicon nitride film 29 (first interlayerinsulating film) is formed over the semiconductor substrate. The siliconnitride film 29 can be formed using, for example, a CVD technique. Then,as shown in FIG. 23, a silicon oxide film 30 (second interlayerinsulating film) is formed over the silicon nitride film 29. The siliconoxide film 30 can be formed using, for example, a CVD technique.Thereafter, the surface of the silicon oxide film 30 is planarized bypolishing with a CMP technique.

Subsequently, as shown in FIG. 24, holes 31 are formed in the siliconoxide film 30 using a photolithography technique and an etchingtechnique. When etching the silicon oxide film 30, the silicon nitridefilm 29 formed below the silicon oxide film 30 is not etched. Thus, thesilicon nitride film 29 serves as an etch stopper in forming the holes31 in the silicon oxide film 30.

Next, as shown in FIG. 25, the silicon nitride film 29 that is exposedin the bottom surfaces of the holes 31 is etched using an etchingtechnique. Thereby, contact holes 32 reaching the surface of thesemiconductor substrate 10 can be formed. When etching the siliconnitride film 29, the sidewalls 24 made of a silicon oxide film cannot beetched. Thus, the sidewalls 24 formed of a silicon oxide film functionas etch stoppers in etching the silicon nitride film 29. This canprevent the sidewalls 24 from being etched away and bringing the contactholes 32 and the gate electrodes 16 into contact with each other. Inother words, by forming interlayer insulating films from the siliconoxide film 30 and the silicon nitride film 29 and etching the films oneafter the other, the contact holes 32 can be formed so as to be alignedwith the gate electrodes 16. As a result, it is possible to prevent thecontact holes 32 and the gate electrodes 16 from being contact with eachother. This technique is what is called SAC.

For example, when the interlayer insulating film is formed only of thesilicon oxide film, the contact holes are formed by etching this siliconoxide film. In this case, if misalignment occurs when forming thecontact holes, the sidewalls are also etched away since the sidewallsare also formed of the silicon oxide film. This means that the risk ofmaking the gate electrodes and the contact holes in contact increases.In contrast, according to the foregoing SAC technique, the sidewalls 24formed of the silicon oxide film are not etched away when etching thesilicon nitride film 29. As a result, even if the positions where thecontact holes 32 are formed are misaligned, the gate electrodes 16 andthe contact holes 32 are prevented from coming into contact with eachother since the sidewalls 24 serve as an etch stopper.

Subsequently, as shown in FIG. 26, a titanium/titanium-nitride film 33 ais formed over the silicon oxide film 30 including the bottom surfaceand the inner wall of each of the contact holes 32. Thetitanium/titanium-nitride film 33 a is made of a laminated film of atitanium film and a titanium nitride film. The titanium/titanium-nitridefilm 33 a can be formed using a sputtering technique. Thistitanium/titanium nitride film 33 a has what is called barrierproperties for preventing, for example, tungsten, which is a material ofa film for filling the holes, from diffusing into silicon.

Subsequently, a tungsten film 33 b is formed over the entire surface ofthe main surface of the semiconductor substrate 10 so as to fill up thecontact holes 32. The tungsten film 33 b can be formed using, forexample, a CVD technique. Then, unnecessary portions of thetitanium/titanium nitride film 33 a and the tungsten film 33 b formedover the silicon oxide film 30 are removed, whereby the plugs 34 can beformed.

Thereafter, as shown in FIG. 3, an aluminum film is formed over thesilicon oxide film 30 and the plugs 34. This aluminum film can be formedusing, for example, a sputtering technique. Subsequently, the aluminumfilm is patterned by using a photolithography technique and an etchingtechnique to form the source pad 1, the gate wire 2, and the guard ring4. Note that although not shown in FIG. 3, a gate pad is also formed. Inthis way, the power MISFET according to the first preferred embodimentcan be formed.

Next, FIG. 27 is an enlarged view illustrating how a plug 34 and thesemiconductor substrate 10 are in contact with each other. As shown inFIG. 27, the plug 34 is formed between the adjacent gate electrodes 16.This plug 34 is formed using the above-described SAC technique;therefore, the sidewalls 24 are not etched when forming the plug 34, andthe plug 34 is formed by self-alignment with the gate electrode 16.Thus, owing to the SAC technique, even when the plug 34 has such a widthas to come in contact with the sidewalls 24, the sidewalls 24 are notscraped and the gate electrodes 16 and the plug 34 are prevented frombeing in contact with each other. That is, it becomes possible to notonly etch the contact holes 32 using an oversized mask but also toalleviate the limitation due to the alignment accuracy originating fromthe photolithography technique. Thereby, the occupied area of the unitcell can be easily reduced. Specifically, the distance between the gateelectrodes 16 can be reduced to such an extent that the plug 34 may havea width that allows contact with the sidewalls 24. Hence, the inventionhas an advantage that it can improve the cell density without increasingthe contact resistance of the plug 34.

Furthermore, the use of the SAC technique for the formation of the plugs34 can prove more effective when the formation of the body trench 25 byself-alignment with the gate electrodes 16 and the formation of thecobalt silicide film 28 over the body trench 25 are implemented togetherwith the use of the SAC technique. That is, by using the SAC techniquefor the formation of the plugs 34, the plugs 34 are formed byself-alignment with the gate electrodes 16. Likewise, the body trench 25is also formed by self-alignment with the gate electrodes 16.Accordingly, the source region 23 exposed in the side surface of thebody trench 25 and the body contact region 26 formed at a bottom portionof the body trench 25 are coupled to the plug 34 in a self-alignedmanner. As a result, it becomes possible to couple the source region 23,the body contact region 26, and the plug 34 to one another reliably.Moreover, the cobalt silicide film 28 is formed over the surface of thebody trench 25, and the source region 23 and the body contact region 26are electrically coupled to each other via this cobalt silicide film 28.For example, even if a plug 34 is misaligned and consequently coupledonly to either one of the body contact region 26 or the source region 23exposed in the body trench 25, the plug 34 can be electrically coupledto the source region 23 and the body contact region 26 because the plug34 is coupled to the cobalt silicide film 28. Furthermore, since theplug 34 is coupled to the cobalt silicide film 28, contact resistancecan be reduced and the on-state resistance can be lowered.

Here, for the purpose of comparison, FIG. 28 shows an example in whichthe plug 34 is formed by the SAC technique but the body contact region26 is formed by a photolithography technique. In FIG. 28, the plug 34 isformed by self-alignment with the gate electrodes 16. On the other hand,the body contact region 26 is formed by a photolithography technique andis therefore assumed to be misaligned. At this time, it is possible thatone of the source regions 23, which are formed adjacent to both sides ofthe body contact region 26, is formed directly below a sidewall 24,which can result in the condition in which the source region 23 is notexposed from the semiconductor substrate 10. This means that even if theplug 34 is formed by self-alignment with the gate electrodes 16, theplug 34 cannot be electrically coupled to the source region 23 that isformed only directly below the sidewall 24.

In contrast, in the first preferred embodiment, the body trench 25 isformed by self-alignment with the gate electrodes 16 and the cobaltsilicide film 28 is formed over the surface of the body trench 25.Therefore, unlike the configuration that has been compared above, thesource region 23 is prevented from failing to be electrically coupled tothe plug 34. In this way, by using the SAC technique for the formationof the plug 34, also forming the body trench 25 by self-alignment withthe gate electrodes 16, and moreover forming the cobalt silicide film 28over the surface of the body trench 25, the reliability of the powerMISFET can be improved without being restricted by the photolithographytechnique. In particular, since the plug 34 is formed by SAC and thebody trench 25 is formed by self-alignment with the gate electrodes 16,a highly symmetrical power MISFET can be achieved. As a result, thedevice operations become uniform, and it becomes possible to improve theresistance to avalanche breakdown or the like.

In addition, another advantage will be discussed. FIG. 29 is a viewillustrating a case in which the width of a plug 34 is narrower than thewidth of the gap between its adjacent sidewalls 24. In this case,depending on the width of the plug 34, it is possible that the plug 34is not coupled to both of the body contact region 26 and the sourceregion 23. FIG. 29 shows a case in which the plug 34 is coupled only tothe body contact region 26. Even in such a case, the body contact region26 and the source region 23 are coupled to each other by the cobaltsilicide film 28 formed over the surface of the body trench 25. Thismeans that even when the plug 34 is not directly coupled to the sourceregion 23, the plug 34 and the source region 23 are indirectly coupledto each other via the cobalt silicide film 28. From this, it will beappreciated that, according to the first preferred embodiment, noproblem arises even when the plug 34 is not directly coupled to thesource region 23.

In addition, since the cobalt silicide film 28 is formed over the sourceregion 23 and the body contact region 26, the resistance in each of theregions can be reduced.

As has been described above, one of the features of the first preferredembodiment is that the SAC technique is used for the formation of theplug 34, also the body trench 25 is formed by self-alignment with thegate electrodes 16, and the cobalt silicide film 28 is formed over thesurface of the gate electrodes 16 and the body trench 25. Although sucha configuration is desirable, part of the advantage according to thefirst preferred embodiment may be obtained even by only the use of theSAC technique for forming the plug 34. In addition, part of theadvantage according to the first preferred embodiment may be obtainedeven with the use of technique of forming the body trench 25 byself-alignment with the gate electrodes 16 and forming the cobaltsilicide film 28 over the surface of the gate electrode 16 and the bodytrench 25.

Second Preferred Embodiment

A second preferred embodiment describes an example in which the sourceregion is formed from a shallow source extension region and a deepsource diffusion region. First, a manufacturing method of a power MISFETaccording to the second preferred embodiment is described with referenceto the drawings.

The process steps from FIG. 5 through FIG. 15 are the same as describedin the first preferred embodiment. Subsequently, as shown in FIG. 30, asource extension region 35 (first source region) the formation positionof which is shallow is formed adjacent to a gate electrode 16 in thecell region (active cell) using a photolithography technique and an ionimplantation technique. The source extension region 35 is asemiconductor region doped with an n-type impurity.

Next, as shown in FIG. 31, a silicon oxide film is formed over theentire surface of the main surface of the semiconductor substrate 10,and thereafter, the sidewall 24 is formed on the side wall portion ofthe gate electrode 16 by anisotropic dry etching. Then, as shown in FIG.32, a source diffusion region 36 (second source region) the formationposition of which is deep is formed adjacent to the sidewall 24, using aphotolithography technique and an ion implantation technique. The sourcediffusion region 36 is a semiconductor region doped with an n-typeimpurity. The subsequent process steps are the same as described in thefirst preferred embodiment. Finally, a power MISFET as shown in FIG. 33can be formed.

As illustrated in FIG. 33, the source extension region 35 is formed in aregion adjacent to the gate electrode 16, and the source diffusionregion 36 is formed outward of and adjacent to this source extensionregion 35. The body trench 25 is formed by self-alignment with the gateelectrodes 16, and the source diffusion region 36 is exposed in a sidesurface of this body trench 25. The cobalt silicide film 28 is directlyin contact with the exposed portion of the source diffusion region 36.Here, the region exposed in the side surface of the body trench 25 isnot the shallow source extension region 35 but the deep source diffusionregion 36. Therefore, a sufficient contact area can be ensured betweenthe cobalt silicide and the source diffusion region 36. As a result, theresistance in the source diffusion region can be reduced.

In addition, the second preferred embodiment employs the structure inwhich the top portion of the gate electrode 16 protrudes from thesemiconductor substrate 10 and therefore can prevent a source offseteven though the shallow source extension region 35 is formed in a regionadjacent to the gate electrode 16.

Next, an advantage obtained by forming the source region from theshallow source extension region 35 and the deep source diffusion region36 as in the power MISFET according to the second preferred embodimentis discussed with reference to the drawings.

FIG. 34 is a cross-sectional view illustrating a power MISFET comprisingone source region 23, as in the foregoing first preferred embodiment. Onthe other hand, FIG. 35 is a cross-sectional view illustrating a powerMISFET having a source region comprising the source extension region 35and the source diffusion region 36, as in this second preferredembodiment. In FIG. 34, the channel length between the source region 23and the drain region (the semiconductor substrate 10) is a. On the otherhand, in FIG. 35, the channel length of the channel formed near the sidewall portion of the gate electrode 16 is b. In other words, the channellength between the source extension region 35 and the drain region is b.Here, the depth of the source extension region 35 shown in FIG. 35 isshallower than the depth of the source region 23 shown in FIG. 34.Therefore, the channel length b shown in FIG. 35 is longer than thechannel length a shown in FIG. 34. As a result, the power MISFET shownin FIG. 35 is less likely to suffer from punch through than the powerMISFET shown in FIG. 34. In other words, by forming the source extensionregion 35 positioned in a shallow region, punch-through resistance canbe improved. In other words, in the structure shown in FIG. 35, in whichthe source extension region 35 is provided, the length of the gatetrench 13 can be made shorter if the desired punch-through resistance isat the same level as that of the structure shown in FIG. 34. That is, itis possible to achieve size reduction (shrinkage) of the power MISFET inthe vertical direction in the structure in which the source extensionregion 35 is provided. For this reason, it becomes possible to reducethe on-state resistance of the power MISFET. As has been describedabove, the second preferred embodiment has an advantage that the sizereduction (shrinkage) in the vertical direction can be achieved inaddition to the size reduction (shrinkage) in the horizontal direction,as obtained by the first preferred embodiment.

Next, a variation of the ion implantation technique for forming thesource extension region 35 and the source diffusion region 36 will bedescribed. In the step of ion implantation for forming the sourceextension region 35 and the source diffusion region 36, the ionimplantation is not limited to the ion implantation method normallyused, in which ions are implanted in a perpendicular direction to thesemiconductor substrate; it is possible to use an ion implantationmethod in which ions are implanted in a diagonal direction with respectto the semiconductor substrate surface. The ion species is not limitedto arsenic (As) and phosphorus (P) but may also be antimony (Sb). In theion implantation technique in a diagonal direction, the amount (dose) ofions to be implanted is about, for example, from 1×10¹⁴ to 5×10¹⁵, andit is desirable that the dose should be as high as possible. The ionimplantation method in a diagonal direction may be carried out by a stepimplantation method, in which the total dose is divided equally intomultiple doses and the semiconductor substrate is rotated each time onedivided dose has been implanted, or a rotation implantation method, inwhich the ion implantation is performed while the semiconductorsubstrate is being rotated at a constant speed. The inclination anglemay be within the range of from greater than 0 degrees to 45 degrees orless. The angle represents an angle with respect to the perpendiculardirection to the main surface of the semiconductor substrate. The methodof ion-implanting in a diagonal direction in this way has the advantagesas follows, in comparison with the case in which the ion implantation isperformed in the vertical direction.

When an extremely shallow junction such as the source extension region35 is formed by an ion implantation technique, it becomes difficult toachieve the shallow junction uniformly because of the diffusion of theimpurity ions originating from the channeling in the ion implantation.The method of implanting ions in a diagonal direction, however, cansuppress this channeling and is therefore capable of reducing variationsin the depth of the source extension region 35.

When employing a low heat load annealing such as RTA (Rapid ThermalAnnealing) after the ion implantation in order to achieve an extremelyshallow junction such as the source extension region 35, it is possiblethat the source offset structure as shown in FIG. 36 may be formedbecause of the features of the device structure. FIG. 36 shows a case inwhich the ion implantation is carried out in the vertical direction. Asshown in FIG. 36, when the ion implantation is carried out in thevertical direction, a gap (source offset) may be produced between thegate electrode 16 and the source extension region 35 since a very smallsidewall 37 is formed on the side wall portion of the gate electrode 16.In other words, when ions are implanted in the perpendicular direction,ions cannot be implanted in the region that is in contact with the gateelectrode 16 because the sidewall 37 exists above the region that is incontact with the gate electrode 16. Furthermore, since the annealing isconducted by a low heat load annealing to achieve an extremely shallowjunction, impurity diffusion does not occur so much. Specifically,impurity diffusion takes place due to the annealing after the ionimplantation, but in the second preferred embodiment, the impurity doesnot diffuse to the contact region with the gate electrode 16 because theannealing is carried out by a low heat load annealing. For thesereasons, there is a risk that a source offset occurs. If a source offsetoccurs, the problem of large on-state resistance arises.

In view of this, it is conceivable that the ion implantation should becarried out in a diagonal direction, as shown in FIG. 37. By carryingout the ion implantation in a diagonal direction, the ions are implantedso as to get under the sidewall 37 formed on the side wall portion ofthe gate electrode 16. Thus, there is an advantage that the sourceextension region 35 is formed also in the region that is in contact withthe gate electrode 16 and that the source offset can be preventedwithout enhancing the annealing.

Furthermore, the source diffusion region 36 may also be ion-implanted ina diagonal direction. The advantages obtained in this case will bediscussed. FIG. 38 is a cross-sectional view illustrating a case inwhich the source diffusion region 36 is formed by an ion implantation inthe vertical direction. As illustrated in FIG. 38, the sidewall 24 isformed on a side wall portion of the gate electrode 16, and the sourcediffusion region 36 is formed so as to be aligned with the sidewall 24.This source diffusion region 36 is formed after the sidewall 24 has beenformed and is therefore not formed directly below the sidewall 24.However, because of the annealing after the ion implantation, the ionsdiffuse under the sidewall 24. By this annealing, the source diffusionregion 36 gets under the sidewall 24 by a distance a.

In contrast, FIG. 39 shows a cross-sectional view illustrating a case inwhich the source diffusion region 36 is formed by an ion implantation ina diagonal direction. In this case, since the ion implantation iscarried out in a diagonal direction, the source diffusion region 36 isalso formed directly below the sidewall 24 at the time of the ionimplantation. Thus, the impurity can be diffused to the region denotedas a under the sidewall 24 with a less heat quantity in annealing thanthe case shown in FIG. 38, in which ions are implanted in theperpendicular direction. That is, when the ion implantation is carriedout in a diagonal direction, the source diffusion region 36 can bebrought close to the gate electrode 16 side with a less heat quantity inannealing, and an increase in the source resistance can be prevented.

Thus, the second preferred embodiment makes it possible to reduce thesize of the device structure in the perpendicular direction and toreduce the heat quantity applied to the semiconductor substrate. Sincethe heat quantity applied to the semiconductor substrate can be reduced,it becomes easy to use a semiconductor substrate doped with phosphorusat a high concentration as the n-type semiconductor substrate in placeof the semiconductor substrate doped with arsenic at a highconcentration. A problem with the use of the semiconductor substratedoped with phosphorus at a high concentration is that the diffusionconstant of phosphorus is about ten times greater than that of arsenic.For this reason, when the heat quantity (thermal budget) in themanufacturing process cannot be reduced, phosphorus diffuses from thesemiconductor substrate greatly because of the annealing. Accordingly,in order to ensure a withstand voltage between the source region and thedrain region, it is necessary to have a thick n-type epitaxial layer,and the on-state resistance needs to be sacrificed.

Nevertheless, the use of the semiconductor substrate doped withphosphorus at a high concentration has an advantage for the followingreason. For example, phosphorus has such a characteristic that it canachieve a low resistance since phosphorus shows a greater solidsolubility to silicon than arsenic and antimony. Accordingly, phosphorushas the advantage that it can reduce the on-state resistance of thedevice. In view of this, the second preferred embodiment makes itpossible to reduce the heat quantity so that the diffusion of phosphoruscan be suppressed. Therefore, the second preferred embodiment can makeit easy to use the semiconductor substrate doped with phosphorus, whichhas the above-described advantage, while ensuring withstand voltagebetween the source region and the drain region.

Third Preferred Embodiment

A third preferred embodiment describes an example in which the inventionis applied to a technique for forming a power MISFET and a Schottkybarrier diode in the same semiconductor chip.

FIG. 40 is a circuit diagram of a common synchronous rectifier-typeDC/DC converter that uses power MISFETs, and FIG. 41 is a timing chartof the main-switch power MISFET Q1 and the synchronous rectifying powerMISFET Q2 shown in FIG. 40. In FIG. 40, Q1 represents a main-switchpower MISFET, Q2 represents a synchronous rectifying power MISFET, BD1and BD2 represent body diodes, and SBD represents a Schottky barrierdiode. Also, L represents inductance and C represents a capacitorelement. The body diode BD1 and the body diode BD2 are incorporated inthe main-switch power MISFET Q1 and the synchronous rectifying powerMISFET Q2, respectively, and they are coupled in parallel. The Schottkybarrier diode SBD is coupled in parallel to the synchronous rectifyingpower MISFET Q2.

The main-switch power MISFET Q1 functions as a switching element, andthe synchronous rectifying power MISFET Q2 functions as an element forsynchronous rectification. As shown in FIGS. 40 and 41, when themain-switch power MISFET Q1 is turned on, electric current flows from aninput voltage Vin side through the main-switch power MISFET Q1 to theinductance L and the capacitor element C side, as shown in FIG. 40(current flowing during period A). Then, when the main-switch powerMISFET Q1 is turned off and the synchronous rectifying power MISFET Q2is turned on, electric current is allowed to flow in a direction suchthat current reduction will not take place by the inductance L, soelectric current flows from the synchronous rectifying power MISFET Q2to the inductance L and the capacitor element C side, as shown in FIG.40 (current flowing during period B). By repeating such an operation, apredetermined voltage is output from the input voltage.

The DC/DC converter is used, for example, for personal computers (PCs).The trends in the operating voltage of the CPUs incorporated in personalcomputers have been toward lower voltage and larger current. Inparticular, in the cases of power supplies for notebook PCs, theoperating frequency also tends to be high since size reduction isconsidered important. As the trends toward lower voltage, largercurrent, and higher frequency advance in this way, it is necessary toextremely narrow the switching pulse width of the main-switch powerMISFET in the on/off operation. Conversely, the on time of thesynchronous rectifying power MISFET becomes about 90% of one period.Such usage requires a low switching loss for the main-switch powerMISFET and at the same time a low on-state resistance for thesynchronous rectifying power MISFET.

In the synchronous rectifier-type DC/DC converter shown in FIG. 40, themain-switch power MISFET Q1 and the synchronous rectifying power MISFETQ2 need to be alternately turned on and off. In order to prevent thethrough-current because of the simultaneous turn-on of the main-switchpower MISFET Q1 and the synchronous rectifying power MISFET Q2, a periodcalled “dead time,” in which both MISFETs are turned off, is provided,as shown in FIG. 41, and the current during that period flows in thedirection indicated as the current flowing during period B in FIG. 40.Specifically, during this period, the current flows through the bodydiode BD2 incorporated in the synchronous rectifying power MISFET Q2, sothe forward voltage drop (VF) becomes large, about 0.8 V. In view ofthis, the Schottky, barrier diode SBD, which shows a smaller forwardvoltage drop (VF) than that of the body diode BD2, is coupled inparallel to the synchronous rectifying power MISFET Q2 to thereby reducethe circuit loss. In other words, the circuit loss during the dead timeis reduced by making use of the fact that the Schottky barrier diode SBDhas a small forward voltage drop (VF).

Accordingly, the use of a Schottky barrier diode is necessary from theviewpoint of reducing the circuit loss. In view of this, there is asemiconductor device in which a semiconductor chip containing a powerMISFET and a semiconductor chip containing a Schottky barrier diode areincorporated in a single package. In this semiconductor device, theelectrical coupling between the power MISFET and the Schottky barrierdiode is effected by a bonding wire; therefore, the parasitic inductanceincreases, and the circuit efficiency of the DC/DC converter degrades.Specifically, because parasitic inductance such as a wire exists betweenthe power MISFET and the Schottky barrier diode, electric currenttemporarily flows through the body diode after the power MISFET isturned off, and then commutates to the Schottky barrier diode with adelay. If this parasitic inductance is large, it not only slows down thecommutation speed but also becomes a cause of noise and ripples.

In view of this, in order to reduce the parasitic inductance, there hasbeen a technique for incorporating the Schottky barrier diode in thesemiconductor chip containing the power MISFET. According to thistechnique, the coupling wire between the power MISFET and the Schottkybarrier diode can be made smaller, so the parasitic inductance can bereduced. As a result, the time of the current flowing through the bodydiode of the power MISFET can be controlled, and the circuit loss duringthe dead time can be considerably reduced in the DC/DC convertercontrolled by PWM (Pulse Width Modulation) control. For these reasons,the power MISFET and the Schottky barrier diode are incorporatedtogether in a single semiconductor chip.

FIG. 42 is a plan view illustrating an upper surface of thesemiconductor chip in which the power MISFET and the Schottky barrierdiode are incorporated. The device shown in FIG. 42 has a similar sameconfiguration to the device shown in FIG. 1 of the first preferredembodiment. What is different is that an SBD junction portion in whichthe Schottky barrier diode is formed is provided at a central portion ofthe semiconductor chip. The source pad 1 is also provided for this SBDjunction portion.

FIG. 43 is a schematic enlarged cross-sectional view taken along theline B-B in FIG. 42. FIG. 43 illustrates the structure formed in a layerthat is below the surface layer shown in FIG. 42, in which the sourcepad 1, the gate wire 2, the gate pad 3, and the guard ring 4 are formed.In other words, it shows, in a plan view, the structure formed in alayer below the surface layer, with an interlayer dielectric filminterposed therebetween. The structure also has a similar configurationas the first preferred embodiment. What is different is that an SBDjunction portion is provided at its central portion.

FIG. 44 is a cross-sectional view taken along the line B-B in FIG. 42.The structure shown in FIG. 44 has a similar configuration to that shownin the foregoing first preferred embodiment. For example, theconfiguration of the power MISFET is the same, but what is different isthat the SBD junction portion, in which a Schottky barrier diode isformed, is provided at a central portion of the semiconductor chip. Theconfiguration of this SBD junction portion will be discussed. In the SBDjunction portion, an n-type semiconductor region 10E doped with ann-type impurity at a low concentration is formed over an n-typesemiconductor substrate 10S. This n-type semiconductor region 10Ebecomes a cathode region of the Schottky barrier diode and therefore hasa lower impurity concentration than that of the n-type semiconductorregion 41 in which the power MISFET is formed. A junction groove 25 b isformed in the surface of the n-type semiconductor region 10E, and thecobalt silicide film 28 is formed over the surface of this junctiongroove 25 b. As a result, a Schottky junction is formed in the region inwhich the cobalt silicide film 28 and the n-type semiconductor region10E are directly in contact with each other. In other words, a Schottkybarrier diode comprising the n-type semiconductor region 10E as thecathode region and the cobalt silicide film 28 as the anode region isformed. In addition, the silicon nitride film 29 is formed over thecobalt silicide film 28, and the silicon oxide film 30 is formed overthis silicon nitride film 29. The plugs 34 are formed in the siliconnitride film 29 and the silicon oxide film 30 so as to pierce throughthese films and reach the cobalt silicide film 28. The source pad 1 isformed over these plugs 34.

The semiconductor device according to the third preferred embodiment isconfigured as described above. In the following, a manufacturing methodof a semiconductor device that incorporates a power MISFET and aSchottky barrier diode will be described with reference to the drawings.

As shown in FIG. 45, using an epitaxial growth technique, the n-typesemiconductor region 10E is formed over the semiconductor substrate 10Sdoped with an n-type impurity. The n-type semiconductor region 10Eformed by the epitaxial growth technique is doped with the n-typeimpurity at a lower concentration than the n-type epitaxial layer in thefirst preferred embodiment. In the third preferred embodiment, theSchottky barrier diode is formed using this n-type semiconductor region10E. For this reason, an n-type impurity such as phosphorus is implantedat a low concentration so that it can be a cathode of the Schottkybarrier diode. Next, the insulating film 11 (first insulating film) isformed over the n-type semiconductor region 10E, using, for example, athermal oxidation technique. This insulating film 11 is formed of, forexample, a silicon oxide film.

Subsequently, as shown in FIG. 46, the insulating film 11 is patternedto form openings 12, using a photolithography technique and an etchingtechnique. Then, as shown in FIG. 47, the gate trenches 13 are formed inthe semiconductor substrate 10S, using as a mask the insulating film 11in which the openings 12 have been formed. The gate trenches 13 areformed by, for example, dry etching.

Next, as shown in FIG. 48, the gate insulating film 14 is formed overthe inner wall of each of the gate trenches 13. This gate insulatingfilm 14 is formed of, for example, a silicon oxide film, and can beformed by, for example, a thermal oxidation technique.

Next, as shown in FIG. 49, the polysilicon film 15 is formed over theinsulating film 11. At this time, the polysilicon film 15 is formed soas to fill the interior of the gate trenches 13. An n-type impurity suchas phosphorus (P) or arsenic (As) is added to the polysilicon film 15,and the polysilicon film 15 may be formed using, for example, a CVD(Chemical Vapor Deposition) technique. Subsequently, as shown in FIG.50, the polysilicon film 15 formed over the insulating film 11 isremoved by polishing using a chemical mechanical polishing (CMP)technique. Thereby, the polysilicon film 15 remains only in the interiorof the openings 12 and the gate trenches 13 provided in the insulatingfilm 11. Thus, the gate electrodes 16 are formed.

Next, as shown in FIG. 51, a resist film 40 is applied over thesemiconductor substrate 10S using, for example, a spin coatingtechnique. Then, the resist film is patterned by performing exposure anddevelopment processes. The patterning is performed so that the regionwhere the Schottky barrier diode is to be formed should be covered whilethe cell region of the power MISFET should be opened. Then, an n-typeimpurity is implanted into the cell region of the power MISFET by an ionimplantation technique using the patterned resist film 40 as a mask, toform the n-type semiconductor region 41. This n-type semiconductorregion 41 is doped with an n-type impurity at a higher concentrationthan the n-type semiconductor region 10E. This n-type semiconductorregion 41 is formed for the following reason. Specifically, in the thirdpreferred embodiment, the impurity concentration of the n-typesemiconductor region 10E is lowered in order to form the Schottkybarrier diode. This n-type semiconductor region 10E is formed not onlyin the Schottky barrier diode forming region but also in the cell regionof the power MISFET. If this n-type semiconductor region 10E with a lowimpurity concentration is used as the drain region of the power MISFETas it is, it is believed that the on-state resistance increases due tothe low concentration. In view of this, in the third preferredembodiment, the n-type semiconductor region 41 with a higher impurityconcentration than the n-type semiconductor region 10E is formed in thecell region of the power MISFET. By using the n-type semiconductorregion 41 with a high impurity concentration as the drain region of thepower MISFET, the on-state resistance can be reduced. That is, byforming the n-type semiconductor region 10E and the n-type semiconductorregion 41, the third preferred embodiment makes it possible to form thecathode of the Schottky barrier diode and at the same time to form thedrain region of the power MISFET capable of reducing the on-stateresistance.

Subsequently, as shown in FIG. 52, a resist film 17 is applied, andthereafter, exposure and development processes are performed to patternthe resist film 17. The patterning is conducted so as to form openingsin the regions where the p-type wells 18 are to be formed. Specifically,the resist film is patterned so as to open portions of the gate wireextension region and the cell region (inactive cell). Then, a p-typeimpurity such as boron (B) is ion-implanted using the patterned resistfilm 17 as a mask, whereby the p-type wells 18 are formed.

Next, as shown in FIG. 53, the polysilicon film 19 is formed over theinsulating film 11 including the gate electrodes 16. An n-type impuritysuch as phosphorus or arsenic is added to the polysilicon film 19, andthe polysilicon film 19 may be formed using, for example, a CVDtechnique. Then, as shown in FIG. 54, the polysilicon film 19 ispatterned using a photolithography technique and an etching technique.Thereby, the gate extension electrode 20 can be formed in the gate wireextension region. Further, the insulating film 11 is patterned using aphotolithography technique and an etching technique. The insulating film11 that is formed in the cell region (inactive cell) and in the cellregion (active cell) is removed through this patterning. As a result,each of the gate electrodes 16 forms such a shape that a portion thereofprotrudes from the semiconductor substrate 10S. In other words, a gateelectrode 16 a portion of which protrudes from the semiconductorsubstrate 10S can be formed through the step of removing the insulatingfilm 11. On the other hand, the insulating film 11 is patterned toremain in the gate wire extension region, and as a result, theinsulating film 21 remains below the gate extension electrode 20.

Subsequently, as shown in FIG. 55, the channel forming region 22, whichbecomes the body region, is formed in the semiconductor substrate 10Swithin the cell region (inactive cell) and the cell region (active cell)using a photolithography technique and an etching technique. Thischannel forming region 22 is a p-type semiconductor region doped with ap-type impurity such as boron. Then, the source region 23 is formed inthe cell region (active cell) using a photolithography technique and anion implantation technique. The source region 23 is formed in a regionadjacent to the gate electrode 16. The source region 23 is an n-typesemiconductor region doped with an n-type impurity such as arsenic.

Then, as shown in FIG. 56, a silicon oxide film (second insulating film)is formed over the semiconductor substrate 10S using, for example, a CVDtechnique and thereafter, by subjecting the formed silicon oxide film toanisotropic dry etching, sidewalls 24 are formed on side wall portionsof the gate electrodes 16. Since portions of the gate electrodes 16protrude from the semiconductor substrate 10S, the sidewalls 24 areformed on the side wall portions of the protruding portions.

Next, as shown in FIG. 57, using the sidewalls 24 as a mask, a bodytrench 25 that is deeper than the depth of the adjacent source region 23is formed. Specifically, the body trench 25 self-aligned with theadjacent gate electrodes 16 is formed between the sidewalls 24 formedover the side wall portions of the adjacent gate electrodes 16. In thisway, according to the third preferred embodiment, it becomes possible toeliminate the limitation arising from the problem of alignment accuracyand to reduce the occupied area by a unit cell, because the body trench25 is formed without using a photolithography technique.

Here, the body trench 25 has been formed by self-alignment with the gateelectrodes 16, and in the same process steps, the junction groove 25 bis formed in the SBD junction portion. This junction groove 25 b is alsoformed by self-alignment with sidewall 24. The junction groove 25 b isso formed that the width thereof will be wider than the body trench 25but the depth will be about the same. The Schottky junction of theSchottky barrier diode is formed in the surface of the junction groove25 b, as will be described later. It may seem, however, that it is notnecessary to form the junction groove 25 b in the region where theSchottky junction of the Schottky barrier diode is to be formed. Thatis, it may seem possible to form the junction portion over the surface(flat surface region) of the semiconductor substrate 10S (n-typesemiconductor region 10E) in which the junction groove 25 b is notformed. However, the semiconductor substrate 10S is subjected to variousannealing processes in the prior manufacturing steps. Especially whenforming the insulating film 11 among the anneal processes, phosphorusimplanted in the n-type semiconductor region 10E segregates near thesurface of the n-type semiconductor region 10E. Consequently, when theSchottky junction is formed in the surface of the n-type semiconductorregion 10E, the withstand voltage of the Schottky barrier diode degradesbecause the impurity concentration has been increased by the segregatedphosphorus. In view of this, in the third preferred embodiment, thejunction groove 25 b is formed in the surface of the n-typesemiconductor region 10E. By forming the junction groove 25 b in thisway, the phosphorus segregated near the surface of the n-typesemiconductor region 10E can be removed. In other words, the adverseeffect originating from the segregated phosphorus can be prevented byforming the Schottky junction in the surface of the junction groove 25b. Therefore, the Schottky barrier diode can achieve a high withstandvoltage.

Subsequently, as shown in FIG. 58, a resist film 42 is applied over thesemiconductor substrate 10S, and thereafter, the resist film 42 ispatterned by exposure and development processes. The patterning iscarried out so that only the SBD junction portion will be covered andthe rest of the regions will be exposed. Then, using the patternedresist film 42 as a mask, a p-type impurity such as boron fluoride isimplanted over the entire surface of the main surface (element formingsurface) of the semiconductor substrate 10S. Thereby, a body contactregion 26 (first semiconductor region) is formed at a bottom portion ofthe body trench 25. The body contact region 26 is a p-type semiconductorregion doped with the p-type impurity at a higher concentration than inthe channel forming region 22. This body contact region 26 is formed byimplanting the p-type impurity over the entire surface of thesemiconductor substrate 10S without using a photolithography technique.Therefore, the body contact region 26 can be formed without beingrestricted by the problem of alignment accuracy in the originating fromthe photolithography technique.

In this step, the Schottky junction portion is covered and protected bythe resist film 42 so that the p-type impurity will not be introduced inthe surface of the junction groove 25 b. This is to prevent the surfaceof the junction groove 25 b from being doped with the p-type impurityand from forming a pn junction.

Next, as shown in FIG. 59, a cobalt film is formed over the entiresurface of the main surface of the semiconductor substrate 10S using,for example, a sputtering technique. Thereafter, by annealing thesemiconductor substrate 10S, a cobalt silicide film 28 (first metalsilicide film) is formed over the surfaces of the gate electrode 16, thegate extension electrode 20, the body trench 25, and the junction groove25 b. Specifically, silicon and the cobalt film are directly in contactwith each other at the surfaces of the gate electrode 16, the gateextension electrode 20, the body trench 25, and the junction groove 25b, and therefore, the silicon and the cobalt film react with each otherby the annealing, forming the cobalt silicide film 28. In this way, thecobalt silicide film 28 can be formed over the gate electrode 16.Therefore, it is possible to suppress the increase in the gateresistance of the gate electrode 16 because of the shrinkage of the gatetrench 13, which is associated with miniaturization.

In this step, the Schottky junction is formed over the surface of thejunction groove 25 b and the Schottky barrier diode is formed. In otherwords, a Schottky barrier diode comprising the n-type semiconductorregion 10E as the cathode region and the cobalt silicide film 28 as theanode region is formed. Here, in the third preferred embodiment, thecobalt silicide film 28 is formed over the gate electrode 16, the gateextension electrode 20, and the body trench 25 of the power MISFET andat the same time, the cobalt silicide film (second metal silicide film)is formed over the surface of the junction groove 25 b. Thereby, thepower MISFET similar to the first preferred embodiment and the Schottkybarrier diode can be formed at one silicide process step.

The subsequent process steps are the same as described in the firstpreferred embodiment. Thus, it is possible to manufacture asemiconductor device in which the power MISFET and the Schottky barrierdiode are incorporated together in a single semiconductor chip.

The features of the third preferred embodiment may be summarized asfollows. That is, one of the differences from the manufacturing methodof the semiconductor device according to the first preferred embodimentis that the low-concentration n-type semiconductor region 10E is formed.This is necessary for fabricating the Schottky barrier diode. Next, thesecond difference is that the n-type semiconductor region 41 doped withan impurity at a higher concentration than the n-type semiconductorregion 10E is formed in the cell region of the power MISFET. This isnecessary for reducing the on-state resistance of the power MISFET.Further, the third difference is that the body contact region 26 of thepower MISFET is formed in the state that the resist film 42 has beenformed over the junction groove 25 b formed in the SBD junction portion.This is necessary for preventing the p-type impurity from beingintroduced in the Schottky junction formed over the surface of thejunction groove 25 b. By adding these features, the third preferredembodiment makes it possible to incorporate the Schottky diode, formedin the Schottky junction formed by the cobalt silicide film 28 and then-type semiconductor region 10E, in one semiconductor chip whilereducing the on-state resistance of the power MISFET. Moreover, sincethe Schottky junction is formed in the surface of the junction groove 25b, the adverse effects from the phosphorus segregated to the surface ofthe n-type semiconductor region 10E during the annealing step can beeliminated. Therefore, it becomes possible to improve the withstandvoltage of the Schottky barrier diode.

Fourth Preferred Embodiment

A fourth preferred embodiment describes an example of a semiconductordevice capable of reducing the feedback capacitance between the gateelectrode and the drain region in a power MISFET.

The feedback capacitance of the power MISFET having a gate trenchstructure corresponds to the capacitance between the drain region (thesemiconductor substrate 10) and the portion of the gate electrode 16protruding from the channel forming region 22. By the structureaccording to the first preferred embodiment, the power MISFET can beminiaturized and the device density can be increased. However, as theminiaturization of the power MISFET is advanced, the cell densityincreases, and as a consequence, the side effect of feedback capacitanceincrease per unit area occurs. The increase in feedback capacitanceleads to an increase in switching loss of the power MISFET, resulting indegradation in the efficiency of the system. In view of this, the fourthpreferred embodiment describes a configuration that employs theconfiguration of the foregoing first preferred embodiment and moreoverthat is capable of reducing the feedback capacitance between the gateelectrode and the drain region in a power MISFET.

FIG. 60 is a cross-sectional view illustrating a cross section of apower MISFET according to the fourth preferred embodiment. In FIG. 60,most of the structure is the same as that in the foregoing firstpreferred embodiment. A difference is that the film thickness of thesilicon oxide film 46 formed over the bottom portion of the gate trench13 is made thicker than the film thickness of the gate insulating film14 formed over the side surface of the gate trench 13. Thisconfiguration makes it possible to increase the distance between thegate electrode 16 and the drain region (the semiconductor substrate 10)and can therefore reduce the feedback capacitance. As a result, when thepower MISFET according to the fourth preferred embodiment is applied tothe main-switch power MISFET in the DC/DC converter described in theforegoing third preferred embodiment, the switching loss can be reduced.On the other hand, when the power MISFET according to the fourthpreferred embodiment is applied to the synchronous rectifying powerMISFET, it is possible to suppress the self-turn-on phenomenon, whichoccurs when (feedback capacitance (gate-drain capacitance)/inputcapacitance (gate-source capacitance)) becomes large. By increasing thefilm thickness of the insulating film 40 formed over the bottom portionof the gate trench 13 in this way, the efficiency of the DC/DC convertercan be improved.

Next, a manufacturing method of a power MISFET according to the fourthpreferred embodiment is described with reference to the drawings.

As shown in FIG. 61, using an epitaxial growth technique, an n-typeepitaxial layer is formed over the semiconductor substrate 10 doped withan n-type impurity. In the fourth preferred embodiment, thesemiconductor substrate 10 doped with an n-type impurity and the n-typeepitaxial layer are collectively referred to as a semiconductorsubstrate 10. The insulating film 11 (the first insulating film) isformed over the semiconductor substrate 10 using, for example, a thermaloxidation technique. This insulating film 11 is formed of, for example,a silicon oxide film.

Subsequently, the insulating film 11 is patterned to form openings 12,using a photolithography technique and an etching technique. Then, thegate trenches 13 are formed in the semiconductor substrate 10, using asa mask the insulating film 11 in which the openings 12 have been formed.The gate trenches 13 are formed by, for example, dry etching.

Next, as shown in FIG. 62, a silicon oxide film 45 is formed over thesemiconductor substrate 10 in which the gate trenches 13 have beenformed. One of the features of the invention is that high density plasmachemical vapor deposition (HDP-CVD) is used to form the silicon oxidefilm 45. The high density plasma CVD is a method in which a source gasintroduced into the chamber and turned into plasma using ahigh-frequency electric field or magnetic field is used to perform filmformation. Specific examples of the method for generating high densityplasma include an inductively-coupled plasma method (ICP) and electroncyclotron resonance (ECR). The inductively-coupled plasma method is afilm formation method using one type of high density plasma that is usedin chemical vapor deposition or the like. It uses a plasma generated byexciting a gas introduced in the chamber with a inductively-coupledhigh-frequency coil to form a film. The electron cyclotron resonancetechnique is as follows. When an electron receives a Lorentz force, theelectron performs cyclotron motion, in which the electron orbits withina plane perpendicular to a magnetic field. At this time, when applyingan electric field that matches the frequency of orbiting of the electronwithin the plane of the motion of the election, energy resonance occursbetween the cyclotron motion and the electric field, and the energy ofthe electric field is absorbed by the electron. The method that utilizesthis phenomenon to turn various gases into plasma and performs filmformation is the electron cyclotron resonance technique.

A feature of the high density plasma CVD is that the film depositionadvances while the sputtering etching phenomenon takes place for thefilm. Therefore, when the gate trench 13 is filled by the high densityplasma CVD, a thick silicon oxide film 45 is formed over a bottomportion of the gate trench 13 while a thin silicon oxide film 45 isformed over the side surface of the gate trench 13. Thus, as shown inFIG. 62, it is possible to form the silicon oxide film 45 with a largefilm thickness over the bottom portion of the gate trench 13.

Thereafter, wet etching is performed as shown in FIG. 63. The etchamount in this wet etching is set at an etch amount such that thesilicon oxide film 45 over the side surface can be completely removed.At this time, the silicon oxide film 46 with a larger film thicknessthan that over the side surface is formed over the bottom portion of thegate trench 13, so the silicon oxide film 46 with a larger filmthickness is left unetched. In this way, utilizing a feature of highdensity plasma CVD, the silicon oxide film 46 with a large filmthickness can be formed over the bottom portion of the gate trench 13 ina simple manner.

Subsequently, as shown in FIG. 8 of the foregoing first preferredembodiment, the gate insulating film is formed over the side surface ofeach of the gate trenches 13. The subsequent process steps are the sameas described in the first preferred embodiment. The power MISFETaccording to the fourth preferred embodiment can be formed in thismanner.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous othermodifications and variations can be devised without departing from thescope of the invention.

Although the foregoing description of the preferred embodiments hasdescribed power MISFETs having a trench gate structure, the invention isalso applicable to, for example, IGBTs (Insulated Gate BipolarTransistors) having a trench gate structure.

The present invention can be widely used in the industries ofmanufacturing semiconductor devices.

1-20. (canceled)
 21. A semiconductor device comprising: (a) asemiconductor substrate of a first conductivity type having a mainsurface and a back surface, the main surface including a chip outermostregion, an inactive cell region arranged in a side direction of the mainsurface from the chip outermost region and an active cell regionarranged in a side direction of the main surface from the inactive cellregion; (b) a gate trench formed in the inactive cell region and in theactive cell region; (c) a gate insulating film formed over an inner walland a bottom portion of the gate trench; (d) a gate electrode formed soas to fill the gate trench; (e) a source region, of the firstconductivity type, formed in the active cell region so as to be adjacentto the gate electrode; (f) a body region, of a second conductivity typedifferent from the first conductivity type, formed in the active cellregion so as to be deeper than a depth of the source region; (g) a drainregion of the first conductivity type formed in the back surface; and(h) a first well region, of the second conductivity type, formed in theinactive cell region so as to be deeper than a depth of the body regionand deeper than a depth of the gate electrode, wherein, in the inactivecell region, the body region is formed in the first well region.
 22. Thesemiconductor device according to claim 21, wherein the source region isnot formed in the inactive cell region.
 23. A semiconductor devicecomprising: (a) a semiconductor substrate of a first conductivity typehaving a main surface and a back surface, the main surface including achip outermost region, an inactive cell region arranged in a sidedirection of the main surface from the chip outermost region and anactive cell region arranged in a side direction of the main surface fromthe inactive cell region; (b) a gate trench formed in the inactive cellregion and in the active cell region; (c) a gate insulating film formedover an inner wall and a bottom portion of the gate trench; (d) a gateelectrode formed so as to fill the gate trench; (e) a source region, ofthe first conductivity type, formed in the active cell region so as tobe adjacent to the gate electrode such that the source region is notformed in the inactive cell region; (f) a body region, of a secondconductivity type different from the first conductivity type, formed inthe active cell region so as to be deeper than a depth of the sourceregion; (g) a drain region of the first conductivity type formed in theback surface.